Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation

Abstract Low Gain Avalanche Detectors (LGAD) for the High-Granularity Timing Detector (HGTD) are crucial in reducing pileups High-Luminosity Large Hadron Collider. Numerous studies have been conducted on bulk irradiation damage of LGADs. However, few carried out surface LGAD sensors with shallow carbon implantation. In this paper, IHEP-IME LGADs implantation were irradiated up to 2 MGy using gamma investigate damage. Important characteristic parameters, including leakage currents, breakdown voltage (BV), inter-pad resistances, and capacitances, tested before after irradiation. The results showed that current BV increased irradiation, whereas overall resistance exhibited minimal change remained above 10 9 Ω Capacitance was found be less than 4.5 pF a slight decrease gain layer depletion (V gl ) No parameter affected by separation observed All parameters meet requirements HGTD, design can used further optimization.